Send Message
Shenzhen Tengshengda ELECTRIC CO., LTD.
Email ice@tsdatech.com TEL: 86--13825240555
Home > products > Transistor IC Chip >
PDTD123YT-QR
  • PDTD123YT-QR

PDTD123YT-QR

Product Details
Category:
Discrete Semiconductor Products Transistors Bipolar (BJT) Single, Pre-Biased Bipolar Transistors
Current - Collector (Ic) (Max):
500 MA
Product Status:
Active
Transistor Type:
NPN - Pre-Biased
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Series:
Automotive, AEC-Q101
Vce Saturation (Max) @ Ib, Ic:
300mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Supplier Device Package:
TO-236AB
Resistor - Base (R1):
2.2 KOhms
Mfr:
Nexperia USA Inc.
Resistor - Emitter Base (R2):
10 KOhms
Current - Collector Cutoff (Max):
500nA
Power - Max:
250 MW
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
70 @ 50mA, 5V
Base Product Number:
PDTD123
Payment & Shipping Terms
Stock
In Stock
Shipping Method
LCL, AIR, FCL, Express
Description
TRANS PREBIAS NPN 250MW TO236AB
Payment Terms
L/C, D/A, D/P, T/T, Western Union, MoneyGram
Product Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 500 mA 250 mW Surface Mount TO-236AB

Recommended Products

Contact Us at Any Time

86--13825240555
609 No. 4018, baoan Road, Xixiang Street, Baoan District, Shenzhen, Guangdong
Send your inquiry directly to us