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FJN3310RTA
  • FJN3310RTA

FJN3310RTA

Product Details
Category:
Discrete Semiconductor Products Transistors Bipolar (BJT) Single, Pre-Biased Bipolar Transistors
Current - Collector (Ic) (Max):
100 MA
Product Status:
Obsolete
Transistor Type:
NPN - Pre-Biased
Mounting Type:
Through Hole
Frequency - Transition:
250 MHz
Package:
Tape & Box (TB)
Series:
-
Vce Saturation (Max) @ Ib, Ic:
300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max):
40 V
Supplier Device Package:
TO-92-3
Resistor - Base (R1):
10 KOhms
Mfr:
Onsemi
Current - Collector Cutoff (Max):
100nA (ICBO)
Power - Max:
300 MW
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 1mA, 5V
Base Product Number:
FJN331
Payment & Shipping Terms
Stock
In Stock
Shipping Method
LCL, AIR, FCL, Express
Description
TRANS PREBIAS NPN 300MW TO92-3
Payment Terms
L/C, D/A, D/P, T/T, Western Union, MoneyGram
Product Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40 V 100 mA 250 MHz 300 mW Through Hole TO-92-3

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