Integrated Circuit Chip NPN Transistor MOS Diode BSZ100N03MSGATMA1 Original Electronic
Product Description
Product Specifications
Part Number: | BSZ100N03MSGATMA1 |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Id - Continuous Drain Current: | 40 A |
Fall Time: | 2.4 Ns |
Transistor Type: | 1 N-Channel |
Rds On - Drain-Source Resistance: | 7.3 mOhms |
Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 1 V |
Qg - Gate Charge: | 23 nC |
Pd - Power Dissipation: | 30 W |
Series: | OptiMOS 3M |
Typical Turn-Off Delay Time: | 16 Ns |
FAQ
Q1: How long is your delivery time?
A: Group buying delivery time: 30-60 days; General delivery time: 20 days.
Q2: How to buy your products?
A: You can buy the products from our company directly.Normally the procedure is sign the contract, payment by T/T,Contact the shipping company to delivery the goods to your country.
Q3: How about your delivery time?
A:Generally, goods would be shipped in 1-7 work days after payment received, finally depends on order quantities.
Q4: What is your MOQ?
A:Minimum order quantity starts from ONE piece,it depends your specific order!
Q5: HOW can we get samples from you?
A:Samples are available. Normally we take 2 days to arrange samples. If we have no business record with you before, we need to charge boot samples cost and post courier freight.
Q6:What is your products quality?Do you test all your goods before delivery?
A:Yes,We have 100% test before delivery,We can ensure the product quality of our company. All products have 30-90 days of quality assurance.
Any other more questions, please feel free to contact us. We are always at your service !
1.14V ~ 1.26V
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